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1 / 1 3 n ??? n - channel mosfet j cs 1 h n60 order codes ? marking ? package halogen free ? packaging d evice w eight jcs1 h n60 t - o - t - n - a jcs1 h n60 t to - 92 no brede 0.216 g(typ) jcs1 h n60 v - o - v - n - b jcs1 h n60 v ipak no tube 0.35 0 g(typ) jcs1 h n60 r - o - r - n - b jcs1 h n60 r dpak no tube 0.3 00 g(typ) ? package ? main characteristics i d 0.5 a to - 92 1.0 a ipak /dp k a v dss 6 00 v rdson vgs=10v 15 ? qg 6 .1 nc ? ? ??? ? applications ? high efficiency switch mode power supplies ? electronic lamp ballasts based on half bridge ? ? ? ? c rss ( ? 3.7 pf) ? ?? ? ??? ? ? dv/dt ? rohs ? features ? l ow gate charge ? low c rss (typical 3.7 pf ) ? fast switching ? 100% avalanche tested ? improved dv/dt capa bility ? rohs product ? order message r
jcs 1 h n60 20 1 6 07a 2 / 1 3 ?? absolute ratings (tc=25 ) ? parameter symbol ? value unit j cs 1 h n60 t j cs 1 h n60 v / r ???? drain - source voltage v dss 600 600 v ? drain current - continuous i d t=25 t=100 0.5 1.0 a 0.31 0. 62 a ? ? 1 drain current - pulse note 1 i dm 2.0 4.0 a ??? gate - source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 47 mj ? ? 1 avalanche current note 1 i ar 1 .0 a ?? ? 1 repetitive avalanche current note 1 e ar 3. 0 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 4.2 4.2 v/ns ? power dissipation p d t c =25 - derate above 25 3.0 30 w 0. 02 5 0.24 w/ ??? operating and stor age temperature range t j t stg - 55 +150 ?? maximum lead temperature for soldering purposes t l 300 r
jcs 1 h n60 20 1 6 07a 3 / 1 3 e lectrical c haracteristics ? parameter symbol tests conditions min typ max un its ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 6 00 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d = 1m a, referenced to 25 - 0. 6 0 - v/ ???? zero gate voltage drain current i dss v ds = 6 00v,v gs =0v, t c =25 - - 1 0 a v ds = 48 0v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate t hreshold voltage v gs(th) v ds = v gs , i d =250 a 2 .0 - 4 .0 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 0. 5 a - 11 15 ? forward transconductance g fs v ds = 4 0v , i d = 0. 5 note 4 - 0.8 - s ? dynamic characteristics input ca pacitance c iss v ds =25v, v gs =0v, f=1.0mh z - 178 221 pf output capacitance c oss - 19 27 pf reverse transfer capacitance c rss - 3.7 4.8 pf r
jcs 1 h n60 20 1 6 07a 4 / 1 3 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 30 0v,i d = 1. 0 a,r g =25? note 4 5 - 1 5 45 ns ? turn - on rise time t r - 46 105 ns ?? turn - off delay time t d (off) - 26 62 ns ?? turn - off fall time t f - 37 82 ns ? total gate charge q g v ds = 48 0v , i d = 1. 0 a v gs =10v note 4 5 - 6 . 1 7.2 nc ?? gate - source charge q gs - 1. 0 - nc ?? gate - drain charge q gd - 3.0 - nc ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 1. 0 a maximum pulsed drain - source diode forward current i sm - - 4 .0 a ? drain - source diode forward voltage v sd v gs =0v, i s = 1. 0 a - - 1. 0 v ?? reverse recovery time t rr v gs =0v, i s = 1. 0 a di f /dt=100a/ s (note 4) - 1 85 - ns ? reverse recovery charge q rr - 0. 51 - c ? parameter symbol max unit jcs 1 h n60 t jcs 1 h n60 v/r ??? thermal resistance, junction to case r th(j - c) 4.75 /w ? thermal resistance, junction to ambient r th(j - a) 120 1 0 5 /w ? ? 1 ? 2 l = 59 mh, i as = 1. 0 a, v dd =50v, r g =25 ?, ? t j =25 3 i sd 1. 0 a,di/dt 2 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l= 59 mh, i as = 1. 0 a, v dd =50v, r g =25 ? , starting t j =25 3 i sd 1. 0 a,di/dt 2 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essentially independent of operating temperature r
jcs 1 h n60 20 1 6 07a 5 / 1 3 electrical characteristics (curves) t ransfer characteristics o n - resistance variation vs. drain current and gate voltage b ody diode forward volta ge variation vs. source current and temperature c apacitance characteristics gate charge characteristics o n - region characteristics r 0.1 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 25 150 v sd [v] i dr [a] 1 10 0.1 1 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250s pulse test 2. t c =25 i ds (on ) [a] v ds [v] 2 4 6 8 10 0.1 1 10 notes 1.250s pulse test 2.v ds =40v i d [a] v gs [v] 25 150 0 2 4 6 8 10 0 1 2 3 4 5 6 7 v ds =120v v ds =300v v ds =480v q g toltal gate charge [nc] v gs gate source voltage[v] 0.0 0.5 1.0 1.5 2.0 10 11 12 13 14 15 16 note t j =25 v gs =10v r ds (on ) [ ] i d [a] v gs =20v
jcs 1 h n60 20 1 6 07a 6 / 1 3 electrical characteristics (curves) b reakdown voltage variation vs. temperature o n - resistance variation vs. temperature maximum safe operating area for jcs 1 h n60 t m aximum drain current vs. case temperature m aximum safe op erating area for jcs1 h n60 v/r r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v gs =0v 2. i d =250 ? a bv ds (normalized) t j [ ] -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =0.5a r d(on ) (normalized) t j [ ]
jcs 1 h n60 20 1 6 07a 7 / 1 3 electr ical characteristics (curves) transient thermal response curve for jcs 1 h n6 0 t transient thermal response curve for jcs1 h n60 v/r notes : 1. z j a (t) = r(t) * r ja 2. duty factor, d=t1/t2 3. t jm C t a = p dm * z j a (t) r 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 0.01 0.1 1 0.5 single pulse 0.01 0.02 0.05 0.2 0.1 r(t) (normalized) t1 [ms]
jcs 1 h n60 20 1 6 07a 8 / 1 3 ? package mechanical data to - 9 2 u nit mm r
jcs 1 h n60 20 1 6 07a 9 / 1 3 ? package mechanical data ipak gh u nit mm r
jcs 1 h n60 20 1 6 07a 10 / 1 3 ? package mechanical data dpak gh u nit mm r
jcs 1 h n60 20 1 6 07a 11 / 1 3 ? package mechanical data ipak g f u nit mm r
jcs 1 h n60 20 1 6 07a 12 / 1 3 ? package mechanical data dpak g f u nit mm r
jcs 1 h n60 20 1 6 07a 13 / 1 3 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - microelectronics co., ltd sales its product eith er through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 c ontact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www.hwd z.com.cn m arket d epartment add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r
jcs 1 h n60 20 1 6 07a 14 / 1 3 ? appendix ?? date ? last rev. new rev. ? description of changes 201 6 - 0 7 - 0 1 201 6 07a r

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